STMicroelectronicsD44H11GP BJT
Trans GP BJT NPN 80V 10A 50000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 80 | |
| 5 | |
| 150 | |
| 1.5@0.8A@8A | |
| 1@0.4A@8A | |
| 10 | |
| 60@2A@1V|40@4A@1V | |
| 50000 | |
| -55 | |
| 150 | |
| Tube | |
| Industrial | |
| Mounting | Through Hole |
| Package Height | 9.1 |
| Package Width | 4.5 |
| Package Length | 10.2 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
This NPN D44H11 general purpose bipolar junction transistor from STMicroelectronics is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 50000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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