| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| -12 | |
| 1.2 | |
| 1.6 | |
| 50 | |
| 0.1 | |
| 205@8V | |
| 0.959@4.5V | |
| 0.16 | |
| 198@10V | |
| 500 | |
| 7 | |
| 3.7 | |
| 17.4 | |
| 4.3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.95 | |
| Mounting | Surface Mount |
| Package Height | 0.35(Max) |
| Package Width | 1.04(Max) |
| Package Length | 0.64(Max) |
| PCB changed | 3 |
| Supplier Package | PicoStar |
| 3 |
Increase the current or voltage in your circuit with this CSD25483F4T power MOSFET from Texas Instruments. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with femtofet technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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