| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.2 | |
| 200 | |
| 100 | |
| 1 | |
| 2.4@10V | |
| 118@10V | |
| 118 | |
| 17 | |
| 9250@50V | |
| 375000 | |
| 6 | |
| 8 | |
| 32 | |
| 13 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2.5 | |
| Mounting | Surface Mount |
| Package Height | 4.7(Max) |
| Package Width | 9.25(Max) |
| Package Length | 10.26(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DDPAK |
| 3 | |
| Lead Shape | Gull-wing |
Create an effective common drain amplifier using this CSD19536KTTT power MOSFET from Texas Instruments. Its maximum power dissipation is 375000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with nexfet technology.
| EDA / CAD Models |
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