| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.3 | |
| -55 to 175 | |
| 100 | |
| 100 | |
| 1 | |
| 7.7@10V | |
| 38@10V | |
| 38 | |
| 7.5 | |
| 2980@50V | |
| 214000 | |
| 4.1 | |
| 7.2 | |
| 16 | |
| 8.4 | |
| -55 | |
| 175 | |
| Tube | |
| 2.7 | |
| Mounting | Through Hole |
| Package Height | 9.25(Max) |
| Package Width | 4.7(Max) |
| Package Length | 10.36(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
Make an effective common source amplifier using this CSD19531KCS power MOSFET from Texas Instruments. Its maximum power dissipation is 179000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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