10-25% di sconto
onsemiCPH5504-TL-EGP BJT
Trans GP BJT NPN 50V 3A 1200mW 5-Pin CPH T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Dual Common Emitter | |
| 2 | |
| 100 | |
| 50 | |
| 6 | |
| 1.2@100mA@2A | |
| 0.12@50mA@1A|0.21@100mA@2A | |
| 3 | |
| 200@100mA@2V|70@3A@2V | |
| 1200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.9 |
| Package Width | 1.6 |
| Package Length | 2.9 |
| PCB changed | 5 |
| Standard Package Name | SOT |
| Supplier Package | CPH |
| 5 | |
| Lead Shape | Gull-wing |
The three terminals of this NPN CPH5504-TL-E GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.