| RoHS (Unione Europea) | Compliant with Exemption |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Codice HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Material | SiC |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 23 |
| Maximum Continuous Drain Current (A) | 168(Typ) |
| Maximum Drain-Source Resistance (mOhm) | 11.5@15V |
| Typical Gate Charge @ Vgs (nC) | 472@15V |
| Typical Input Capacitance @ Vds (pF) | 13600@800V |
| Maximum Power Dissipation (mW) | 329000(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 125 |
| Supplier Temperature Grade | Industrial |
| Mounting | Screw |
| Package Height | 12 mm |
| Package Width | 56.7 mm |
| Package Length | 62.8 mm |
| PCB changed | 36 |
| Pin Count | 36 |
