| RoHS (Unione Europea) | Compliant with Exemption |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | NRND |
| Codice HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Material | SiC |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 900 |
| Maximum Gate-Source Voltage (V) | 19 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 36 |
| Maximum Gate-Source Leakage Current (nA) | 250 |
| Maximum IDSS (uA) | 100 |
| Maximum Drain-Source Resistance (mOhm) | 78@15V |
| Typical Gate Charge @ Vgs (nC) | 33@15V |
| Typical Gate to Drain Charge (nC) | 12 |
| Typical Gate to Source Charge (nC) | 9 |
| Typical Reverse Recovery Charge (nC) | 185 |
| Typical Input Capacitance @ Vds (pF) | 760@600V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 5@600V |
| Minimum Gate Threshold Voltage (V) | 1.8 |
| Typical Output Capacitance (pF) | 66 |
| Maximum Power Dissipation (mW) | 125000 |
| Typical Fall Time (ns) | 9 |
| Typical Rise Time (ns) | 10 |
| Typical Turn-Off Delay Time (ns) | 14 |
| Typical Turn-On Delay Time (ns) | 36 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Temperature Grade | Industrial |
| Packaging | Tube |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 65@15V |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 90 |
| Typical Diode Forward Voltage (V) | 4.4 |
| Typical Gate Plateau Voltage (V) | 5.8 |
| Typical Reverse Recovery Time (ns) | 28 |
| Typical Gate Threshold Voltage (V) | 2.1 |
| Maximum Positive Gate-Source Voltage (V) | 19 |
| Mounting | Through Hole |
| Package Height | 21.05(Max) |
| Package Width | 5.21(Max) |
| Package Length | 16.13(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
