Infineon Technologies AGBSZ075N08NS5ATMA1MOSFETs
Trans MOSFET N-CH 80V 73A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| 20 | |
| 3.8 | |
| 73 | |
| 100 | |
| 1 | |
| 7.5@10V | |
| 24@10V | |
| 24 | |
| 1600@40V | |
| 69000 | |
| 4 | |
| 4 | |
| 19 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 6.2@10V|8.5@6V | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 3.3 mm |
| Package Length | 3.3 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TSDSON EP |
| 8 | |
| Lead Shape | No Lead |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' BSZ075N08NS5ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 69000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes optimos 5 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Sistemi di droni più intelligenti: dal progetto al decollo
Scarica la guida e dotati di tutti gli strumenti e strategie intelligenti per progettare i sistemi di droni del futuro: agili, efficienti e modulari.