Infineon Technologies AGBSZ018NE2LSIATMA1MOSFETs
Trans MOSFET N-CH 25V 22A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| ±20 | |
| 2 | |
| 22 | |
| 100 | |
| 500 | |
| 1.8@10V | |
| 17@4.5V|36@10V | |
| 36 | |
| 2500@12V | |
| 2100 | |
| 3.6 | |
| 4.8 | |
| 25 | |
| 5.2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.5@10V|2@4.5V | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 3.3 mm |
| Package Length | 3.3 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TSDSON EP |
| 8 | |
| Lead Shape | No Lead |
This BSZ018NE2LSIATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 2100 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.
| EDA / CAD Models |
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