10-25% di sconto
NXP SemiconductorsBFU710F,115RF BJT
Trans RF BJT NPN 2.8V 0.01A 136mW 4-Pin DFP T/R
| Compliant | |
| EAR99 | |
| LTB | |
| COMPONENTS | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| SiGe | |
| Single Dual Emitter | |
| 1 | |
| 10 | |
| 2.8 | |
| <20 | |
| 1 | |
| 0.01 | |
| 0.001 to 0.06 | |
| 100 | |
| 2.5V/10mA | |
| 200@1mA@2V | |
| 200 to 300 | |
| 0.262 | |
| 0.021 | |
| 136 | |
| 5.5(Typ) | |
| 30 | |
| 19.5 | |
| 43000(Typ) | |
| 1.45(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) mm |
| Package Width | 1.35(Max) mm |
| Package Length | 2.2(Max) mm |
| PCB changed | 4 |
| Supplier Package | DFP |
| 4 | |
| Lead Shape | Flat |
The BFU710F,115 RF amplifier from NXP Semiconductors can provide you an alternative to traditional BJTs in that it can work with higher radio frequencies. This RF transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.