onsemiBC847BWT1GGP BJT

Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SC-70 T/R

Use this versatile NPN BC847BWT1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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118.735 pezzi: Spedisce domani

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      Ships from:
      Stati Uniti d'America
      Date Code:
      2246+
      Manufacturer Lead Time:
      28 settimane
      Minimum Of :
      1
      Maximum Of:
      2999
      Country Of origin:
      Cina
         
      • Price: $0.0401
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Spedisce domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2246+
      Manufacturer Lead Time:
      28 settimane
      Country Of origin:
      Cina
      • In Stock: 22.735 pezzi
      • Price: $0.0401
    • (3000)

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      Increment:
      3000
      Ships from:
      Stati Uniti d'America
      Date Code:
      2529+
      Manufacturer Lead Time:
      28 settimane
      Country Of origin:
      Malaysia
      • In Stock: 96.000 pezzi
      • Price: $0.0133

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