Alpha and Omega SemiconductorAON2405MOSFETs
Trans MOSFET P-CH 20V 8A 6-Pin DFN-B EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 0.9 | |
| 8 | |
| 100 | |
| 1 | |
| 32@4.5V | |
| 13@4.5V | |
| 1025@10V | |
| 2800 | |
| 46 | |
| 28 | |
| 95 | |
| 7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 26@4.5V|32@2.5V|41@1.8V|46@1.5V | |
| Mounting | Surface Mount |
| Package Height | 0.55(Max) |
| Package Width | 2 |
| Package Length | 2 |
| PCB changed | 6 |
| Standard Package Name | DFN |
| Supplier Package | DFN-B EP |
| 6 |
Make an effective common source amplifier using this AON2405 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 2800 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.