| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±12 | |
| 5 | |
| 47@10V | |
| 7@4.5V|14@10V | |
| 14 | |
| 645@15V | |
| 2000 | |
| 9 | |
| 3.5 | |
| 41 | |
| 6.5 | |
| -55 | |
| 150 | |
| 39@10V|45@4.5V|59@2.5V | |
| Mounting | Surface Mount |
| Package Height | 1.1 mm |
| Package Width | 1.6 mm |
| Package Length | 2.9 mm |
| PCB changed | 6 |
| Standard Package Name | SO |
| Supplier Package | TSOP |
| 6 |
Make an effective common source amplifier using this AO6401A power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 2000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.

