| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 100@10V | |
| 8@4.5V|16@10V | |
| 16 | |
| 930@30V | |
| 3100 | |
| 7.5 | |
| 3.8 | |
| 31.5 | |
| 8 | |
| -55 | |
| 150 | |
| 80@10V|102@4.5V | |
| Mounting | Surface Mount |
| Package Height | 1.5 |
| Package Width | 3.9 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| 8 | |
| Lead Shape | Gull-wing |
Compared to traditional transistors, AO4441 power MOSFETs, developed by Alpha & Omega Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 3100 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Counter UAV Threats With Smart Defenses
Learn how to combine intelligent processing, advanced sensing and rapid response into a unified counter-UAV defensive system.