onsemi2SC5658M3T5GGP BJT

Trans GP BJT NPN 50V 0.15A 260mW 3-Pin SOT-723 T/R

Design various electronic circuits with this versatile NPN 2SC5658M3T5G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 260 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

A datasheet is only available for this product at this time.

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