Diodes Incorporated2N7002-7-FMOSFETs

The Diodes Incorporated MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance. The maximum Drain Source Voltage of the product is 60 V and Gate Source Voltage is ±20 V. Its maximum power dissipation is 540 mW. This MOSFET has an operating temperature range of -55°C to 150°C.

Features and Benefits:
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Small Surface Mount Package
• Totally Lead-Free & Fully RoHS Compliant
• Halogen and Antimony Free. “Green” Device

Application:
• Motor Control
• Power Management Functions

Compared to traditional transistors, 2N7002-7-F power MOSFETs, developed by Diodes Zetex, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 540 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.