onsemi2N6287GDarlington BJT
Trans Darlington PNP 100V 20A 160000mW 3-Pin(2+Tab) TO-3 Tray
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 1 | |
| 18000@10A@3V | |
| 100 | |
| 4(Min) | |
| 100 | |
| 5 | |
| 4@200mA@20A | |
| 20 | |
| 0.5 | |
| -65 to 200 | |
| 4(Min) | |
| 2@40mA@10A|3@200mA@20A | |
| 100@20A@3V|750@10A@3V | |
| 160000 | |
| -65 | |
| 200 | |
| Tray | |
| <500|500 to 3600 | |
| Mounting | Through Hole |
| Package Height | 8.51(Max) |
| Package Width | 26.67(Max) |
| Package Length | 39.37 |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-3 |
| 3 | |
| Lead Shape | Through Hole |
ON Semiconductor's PNP 2N6287G Darlington transistor is the ideal component to use in situations where a higher current gain is needed. This product's maximum continuous DC collector current is 20 A, while its minimum DC current gain is 100@20A@3 V|750@10A@3V. It has a maximum collector emitter saturation voltage of 2@40mA@10A|3@200mA@20A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@200mA@20A V. Its maximum power dissipation is 160000 mW. This component will be shipped in tray format. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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