BJT FR

2N918 PBFREE

Trans RF BJT NPN 15V 0.05A 200mW 4-Pin TO-72

Central Semiconductor

Spécifications techniques du produit

• RoHS (Unione Europea)

  Compliant

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  8541.21.00.40

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  30

• Maximum Collector-Emitter Voltage (V)

  15

• Maximum Collector-Emitter Voltage Range (V)

  <20

• Maximum Collector-Emitter Saturation Voltage (V)

  0.4@1mA@10mA

• Maximum Base-Emitter Voltage (V)

  3

• Maximum Base-Emitter Saturation Voltage (V)

  1@1mA@10mA

• Maximum DC Collector Current (A)

  0.05

• Maximum DC Collector Current Range (A)

  0.001 to 0.06

• Maximum Collector Cut-Off Current (nA)

  1000

• Operational Bias Conditions

  15V/8mA

• Minimum DC Current Gain

  20@3mA@1V

• Minimum DC Current Gain Range

  2 to 30

• Maximum Junction Ambient Thermal Resistance

  58.3

• Maximum Junction Case Thermal Resistance

  87.5

• Typical Input Capacitance (pF)

  2(Max)

• Typical Output Capacitance (pF)

  3(Max)

• Maximum Power Dissipation (mW)

  200

• Maximum Output Power (W)

  0.03(Min)

• Typical Collector Efficiency (%)

  25(Min)

• Typical Power Gain (dB)

  15(Min)

• Maximum Transition Frequency (MHz)

  600(Min)

• Maximum Noise Figure (dB)

  6

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Diameter

  5.84(Max)

• Mounting

  Through Hole

• Package Height

  5.33(Max)

• PCB changed

  4

• Standard Package Name

  TO

• Supplier Package

  TO-72

• Pin Count

  4

• Lead Shape

  Through Hole

• Family/Series

  2N918

• ALIAS

  2N918 Lead Free

• ROHS Version

  2011/65/EU, 2015/863