Diodes IncorporatedZXTP19060CFFTAGP BJT
Trans GP BJT PNP 60V 4A 2000mW 3-Pin SOT-23F T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 60 | |
| 60 | |
| 7 | |
| 1.05@400mA@4A | |
| 0.075@100mA@1A|0.2@20mA@1A|0.27@400mA@4A | |
| 4 | |
| 200@100mA@2V|160@1A@2V|30@4A@2V | |
| 2000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.7(Max) |
| Longueur du paquet | 3(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23F |
| 3 |
Add switching and amplifying capabilities to your electronic circuit with this PNP ZXTP19060CFFTA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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