Diodes IncorporatedZXTN5551GTAGP BJT
Trans GP BJT NPN 160V 0.6A 2000mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 180 | |
| 160 | |
| 6 | |
| 1@1mA@10mA|1.2@5mA@50mA | |
| 0.15@1mA@10mA|0.2@5mA@50mA | |
| 0.6 | |
| 80@1mA@5V|80@10mA@5V|30@50mA@5V | |
| 2000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.6 |
| Largeur du paquet | 3.5 |
| Longueur du paquet | 6.5 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-223 |
| 4 | |
| Forme de sonde | Gull-wing |
Diodes Zetex brings you the solution to your high-voltage BJT needs with their NPN ZXTN5551GTA general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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