Diodes IncorporatedZXTD720MCTAGP BJT
Trans GP BJT PNP 40V 3A 2450mW 8-Pin DFN EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Dual Dual Collector | |
| 2 | |
| 50 | |
| 40 | |
| 7 | |
| 1.05@250mA@2.5A | |
| 0.04@10mA@0.1A|0.22@50mA@1A|0.3@100mA@1.5A|0.3@200mA@3A|0.37@250mA@2.5A | |
| 3 | |
| 300@10mA@2V|300@100mA@2V|180@1A@2V|60@1.5A@2V|12@3A@2V | |
| 2450 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.78 |
| Largeur du paquet | 2 |
| Longueur du paquet | 3 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | DFN EP |
| 8 | |
| Forme de sonde | No Lead |
Diodes Zetex brings you the solution to your high-voltage BJT needs with their PNP ZXTD720MCTA general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2450 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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