Diodes IncorporatedZXT13N50DE6TAGP BJT
Trans GP BJT NPN 50V 4A 1700mW 6-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Quad Collector | |
| 1 | |
| 100 | |
| 50 | |
| 7.5 | |
| 1@100mA@4A | |
| 0.012@10mA@0.1A|0.1@10mA@1A|0.2@50mA@3A|0.23@100mA@4A|0.18@400mA@4A | |
| 4 | |
| 100 | |
| 250@10mA@2V|300@1A@2V|100@4A@2V|10@10A@2V | |
| 1700 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.3(Max) |
| Largeur du paquet | 1.8(Max) |
| Longueur du paquet | 3.1(Max) |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 6 | |
| Forme de sonde | Gull-wing |
This specially engineered NPN ZXT13N50DE6TA GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 7.5 V. Its maximum power dissipation is 1700 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7.5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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