| Compliant | |
| EAR99 | |
| Obsolete | |
| ZXMD63N03XTA | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 2.3 | |
| 135@10V | |
| 8(Max)@10V | |
| 8(Max) | |
| 290@25V | |
| 1250 | |
| 4.4 | |
| 4.1 | |
| 9.6 | |
| 2.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95(Max) mm |
| Largeur du paquet | 3.1(Max) mm |
| Longueur du paquet | 3.1(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | MSOP |
| 8 | |
| Forme de sonde | Gull-wing |
Make an effective common source amplifier using this ZXMD63N03XTA power MOSFET from Diodes Zetex. Its maximum power dissipation is 1250 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.

