| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±12 | |
| 3 | |
| 2.5 | |
| 100 | |
| 1 | |
| 130@4.5V | |
| 4.5@4.5V | |
| 350@15V | |
| 1250 | |
| 9.1 | |
| 8.1 | |
| 13.5 | |
| 3.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95(Max) mm |
| Largeur du paquet | 3.1(Max) mm |
| Longueur du paquet | 3.1(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | MSOP |
| 8 | |
| Forme de sonde | Gull-wing |
This ZXMD63N02XTA power MOSFET from Diodes Zetex can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1250 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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