| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 250 | |
| 150 | |
| 6 | |
| 1.1@400mA@4A | |
| 0.04@5A@100mA|0.06@50mA@500mA|0.1@100mA@1A|0.26@400mA@4A | |
| 4 | |
| 100@10mA@5V|100@1A@5V|35@4A@5V | |
| 1200 | |
| -55 | |
| 200 | |
| Installation | Through Hole |
| Hauteur du paquet | 3.9 |
| Largeur du paquet | 2.28 |
| Longueur du paquet | 4.57 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | E-Line |
| 3 | |
| Forme de sonde | Through Hole |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN ZTX855 GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.
| EDA / CAD Models |
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