| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 150 | |
| 60 | |
| 6 | |
| 1.05@200mA@4A | |
| 0.05@5mA@0.1A|0.1@50mA@1A|0.15@50mA@2A|0.25@200mA@5A | |
| 5 | |
| 50 | |
| 100@10mA@1V|100@2A@1V|75@5A@1V|25@10A@1V | |
| 1200 | |
| -55 | |
| 200 | |
| Box | |
| Installation | Through Hole |
| Hauteur du paquet | 3.9 mm |
| Largeur du paquet | 2.28 mm |
| Longueur du paquet | 4.57 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | E-Line |
| 3 | |
| Forme de sonde | Through Hole |
Design various electronic circuits with this versatile NPN ZTX851STZ GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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