| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 60 | |
| 5 | |
| -55 to 200 | |
| 1.1@15mA@150mA | |
| 0.35@15mA@150mA | |
| 1 | |
| 100 | |
| 100@150mA@10V|15@1A@10V | |
| 1000 | |
| -55 | |
| 200 | |
| Installation | Through Hole |
| Hauteur du paquet | 3.9 |
| Largeur du paquet | 2.28 |
| Longueur du paquet | 4.57 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | E-Line |
| 3 | |
| Forme de sonde | Through Hole |
Do you require a transistor in your circuit operating in the high-voltage range? This NPN ZTX451 general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.
| EDA / CAD Models |
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