| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Dual Dual Collector | |
| 2 | |
| 80 | |
| 60 | |
| 5 | |
| 1.25@100mA@1A | |
| 0.3@100mA@1A|0.5@200mA@2A | |
| 2 | |
| 70@50mA@2V|100@500mA@2V|80@1A@2V|40@2A@2V | |
| 2750 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.6(Max) |
| Largeur du paquet | 3.7(Max) |
| Longueur du paquet | 6.7(Max) |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | SM8 |
| 8 |
The PNP ZDT751TA general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2750 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Contrer efficacement les menaces des drones
Apprenez à combiner traitement intelligent, détection avancée et réponse rapide dans un système de défense unifié contre les drones.