Microchip TechnologyVN2210N3-GMOSFET
Trans MOSFET N-CH Si 100V 1.2A 3-Pin TO-92 Bag
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 2.4 | |
| 1.2 | |
| 100 | |
| 50 | |
| 350@10V | |
| 300@25V | |
| 740 | |
| 30 | |
| 10 | |
| 50 | |
| 10 | |
| -55 | |
| 150 | |
| Bag | |
| Installation | Through Hole |
| Hauteur du paquet | 5.33(Max) mm |
| Largeur du paquet | 4.19(Max) mm |
| Longueur du paquet | 5.21(Max) mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-92 |
| 3 |
If you need to either amplify or switch between signals in your design, then Microchip Technology's VN2210N3-G power MOSFET is for you. Its maximum power dissipation is 1000 mW. This device utilizes dmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Contrer efficacement les menaces des drones
Apprenez à combiner traitement intelligent, détection avancée et réponse rapide dans un système de défense unifié contre les drones.