Microchip TechnologyVN2110K1-GMOSFET
Trans MOSFET N-CH Si 100V 0.2A 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 0.2 | |
| 4000@10V | |
| 35@25V | |
| 360 | |
| 5 | |
| 5 | |
| 6 | |
| 3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95 |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the VN2110K1-G power MOSFET, developed by Microchip Technology. Its maximum power dissipation is 360 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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