onsemiUMC5NT2GBJT numérique
Trans Digital BJT NPN/PNP 50V 0.1A 150mW 5-Pin SC-88A T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP|NPN | |
| Dual Common Base and Collector | |
| 50 | |
| 0.1 | |
| 20@5mA@10V | |
| 4.7 | |
| 0.47 | |
| 0.25@0.3mA@10mA | |
| 150 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) mm |
| Largeur du paquet | 1.25 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 5 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-88A |
| 5 | |
| Forme de sonde | Gull-wing |
Thanks to ON Semiconductor, easily integrate npn and PNP UMC5NT2G digital transistors into digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 20@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 150 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a dual common base and collector configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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