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STMicroelectronicsULN2068BDarlington BJT
Trans Darlington NPN 50V 1.75A 4300mW 16-Pin Power PDIP Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Quad Common Emitter | |
| 4 | |
| 50 | |
| 15 | |
| 1.75 | |
| 1.1@625uA@500mA|1.2@935uA@750mA|1.3@1.25mA@1A|1.4@2mA@1.25A | |
| 4300 | |
| -20 | |
| 85 | |
| Tube | |
| Industrial | |
| Installation | Through Hole |
| Hauteur du paquet | 5.1(Max) - 0.51(Min) |
| Largeur du paquet | 7.1(Max) |
| Longueur du paquet | 20(Max) |
| Carte électronique changée | 16 |
| Nom de lemballage standard | DIP |
| Conditionnement du fournisseur | Power PDIP |
| 16 | |
| Forme de sonde | Through Hole |
Amplify your current with the NPN ULN2068B Darlington transistor, developed by STMicroelectronics. This product's maximum continuous DC collector current is 1.75 A. It has a maximum collector emitter saturation voltage of 1.1@625uA@500mA|1.2@935uA@750mA|1.3@1.25mA@1A|1.4@2mA@1.25A V. Its maximum power dissipation is 4300 mW. This Darlington transistor array has an operating temperature range of -20 °C to 85 °C. It has a maximum collector emitter voltage of 50 V.
| EDA / CAD Models |
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