| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| Automotive | No |
| PPAP | No |
| High Side|Low Side | |
| Inverting | |
| 2 | |
| Dependent | |
| MOSFET | |
| 2 | |
| 60 | |
| 50 | |
| 95 | |
| TTL | |
| 4.5 | |
| 15 | |
| 3(Typ) | |
| 1(Max) | |
| 2(Min) | |
| 3.5(Typ) | |
| 75(Max) | |
| 749 | |
| -40 | |
| 125 | |
| Overvoltage Shutdown | |
| Tube | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) mm |
| Largeur du paquet | 4(Max) mm |
| Longueur du paquet | 8.75(Max) mm |
| Carte électronique changée | 14 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC |
| 14 | |
| Forme de sonde | Gull-wing |
Turn on and off high power transistors by implementing this TPS2835D power driver manufactured by Texas Instruments. This device has a maximum propagation delay time of 95 ns and a maximum power dissipation of 749 mW. Its maximum power dissipation is 749 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 15 V.
| EDA / CAD Models |
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