| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| 20 | |
| 2 | |
| 4.5 | |
| 100 | |
| 10 | |
| 56@10V | |
| 14@10V | |
| 14 | |
| 510@10V | |
| 2200 | |
| 21 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.7 |
| Largeur du paquet | 1.6 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | VS |
| 6 |
If you need to either amplify or switch between signals in your design, then Toshiba's TPC6110(TE85L,F,M) power MOSFET is for you. Its maximum power dissipation is 2200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes u-mos vi technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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