Microchip TechnologyTN2130K1-GMOSFET
Trans MOSFET N-CH Si 300V 0.085A 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| DMOS | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 300 | |
| ±20 | |
| 0.085 | |
| 25000@4.5V | |
| 50(Max)@25V | |
| 360 | |
| 15(Max) | |
| 7(Max) | |
| 12(Max) | |
| 10(Max) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Compared to traditional transistors, TN2130K1-G power MOSFETs, developed by Microchip Technology, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 360 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.