| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2 | |
| 0.3 | |
| 2500@10V | |
| 35@25V | |
| 17 | |
| 740 | |
| 5 | |
| 5 | |
| 6 | |
| 3 | |
| -55 | |
| 150 | |
| Bag | |
| Installation | Through Hole |
| Hauteur du paquet | 5.33(Max) |
| Largeur du paquet | 4.19(Max) |
| Longueur du paquet | 5.21(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-92 |
| 3 |
Compared to traditional transistors, TN2106N3-G power MOSFETs, developed by Microchip Technology, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 740 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.