ToshibaTK60S06K3L(T6L1,NQMOSFET
Trans MOSFET N-CH Si 60V 60A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 60 | |
| 8@10V | |
| 60@10V | |
| 60 | |
| 2900@10V | |
| 88000 | |
| 60 | |
| 24 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 mm |
| Largeur du paquet | 5.5 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK+ |
| 3 | |
| Forme de sonde | Gull-wing |
Amplify electronic signals and switch between them with the help of Toshiba's TK60S06K3L(T6L1,NQ power MOSFET. Its maximum power dissipation is 88000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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