| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Dual Dual Drain | |
| Enhancement | |
| N|P | |
| 2 | |
| 200 | |
| 2 | |
| 10 | |
| 7000@10V@N Channel|8000@10V@P Channel | |
| 110(Max)@25V@N Channel|200(Max)@25V@P Channel | |
| 15 | |
| 15 | |
| 20 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.65(Max) mm |
| Largeur du paquet | 3.9 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
This TC6320TG-G power MOSFET from Microchip Technology can be used for amplification in your circuit. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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