| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 40 | |
| 16@10V | |
| 42@10V | |
| 42 | |
| 1960@25V | |
| 3000 | |
| 10 | |
| 52 | |
| 25 | |
| 12 | |
| -55 | |
| 175 | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.39(Max) |
| Largeur du paquet | 6.22(Max) |
| Longueur du paquet | 6.73(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
If you need to either amplify or switch between signals in your design, then Vishay's SUD40N08-16-E3 power MOSFET is for you. Its maximum power dissipation is 3000 mW. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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