STMicroelectronicsSTW12NK80ZMOSFET
Trans MOSFET N-CH 800V 10.5A 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| -55 to 150 | |
| 10.5 | |
| 750@10V | |
| 87@10V | |
| 87 | |
| 2620@25V | |
| 190000 | |
| 20 | |
| 18 | |
| 70 | |
| 30 | |
| -55 | |
| 150 | |
| Industrial | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 20.15(Max) mm |
| Largeur du paquet | 5.15(Max) mm |
| Longueur du paquet | 15.75(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
Make an effective common source amplifier using this STW12NK80Z power MOSFET from STMicroelectronics. Its maximum power dissipation is 190000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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