| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 5 | |
| 63@10V | |
| 48@10V | |
| 48 | |
| 2710@25V | |
| 2500 | |
| 11.4 | |
| 5.1 | |
| 39.7 | |
| 13.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.65(Max) mm |
| Largeur du paquet | 4(Max) mm |
| Longueur du paquet | 5(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SO N |
| 8 | |
| Forme de sonde | Gull-wing |
This STS5N15F4 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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