| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 0.4 | |
| 8500@10V | |
| 7@10V | |
| 7 | |
| 156@25V | |
| 3000 | |
| 25 | |
| 5 | |
| 19 | |
| 6.5 | |
| -55 | |
| 150 | |
| Industrial | |
| Ammo | |
| Installation | Through Hole |
| Hauteur du paquet | 4.95(Max) |
| Largeur du paquet | 3.94(Max) |
| Longueur du paquet | 4.95(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-92 |
| 3 | |
| Forme de sonde | Formed |
Create an effective common drain amplifier using this STQ1HNK60R-AP power MOSFET from STMicroelectronics. Its maximum power dissipation is 3000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology.
| EDA / CAD Models |
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