STMicroelectronicsSTGWA15M120DF3Puce IGBT
Trans IGBT Chip N-CH 1200V 30A 259W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| ±20 | |
| 1200 | |
| 1.85 | |
| 30 | |
| 0.25 | |
| 259 | |
| -55 | |
| 175 | |
| Industrial | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 21 |
| Largeur du paquet | 5 |
| Longueur du paquet | 15.8 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
Minimize the current at your gate with the STGWA15M120DF3 IGBT transistor from STMicroelectronics. Its maximum power dissipation is 259000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with field stop|trench technology. It is made in a single configuration.
| EDA / CAD Models |
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