| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±25 | |
| 4 | |
| 5 | |
| 10000 | |
| 1 | |
| 950@10V | |
| 8.8@10V | |
| 8.8 | |
| 271@100V | |
| 60000 | |
| 15.9 | |
| 7.2 | |
| 19.3 | |
| 7.6 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.4(Max) mm |
| Largeur du paquet | 6.2(Max) mm |
| Longueur du paquet | 6.6(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this STD7N60M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 60000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device is made with mdmesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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