| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 6 | |
| 250@10V | |
| 10@10V | |
| 10 | |
| 280@25V | |
| 30000 | |
| 3 | |
| 10 | |
| 20 | |
| 6 | |
| -65 | |
| 175 | |
| Industrial | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.4(Max) mm |
| Largeur du paquet | 6.2(Max) mm |
| Longueur du paquet | 6.6(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this STD6NF10T4 power MOSFET from STMicroelectronics. Its maximum power dissipation is 30000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes stripfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -65 °C to 175 °C.
| EDA / CAD Models |
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