| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| ±25 | |
| 5 | |
| 9 | |
| 100 | |
| 1 | |
| 480@10V | |
| 17@10V | |
| 17 | |
| 644@100V | |
| 85000 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.4(Max) |
| Largeur du paquet | 6.2(Max) |
| Longueur du paquet | 6.6(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Make an effective common gate amplifier using this STD11N65M5 power MOSFET from STMicroelectronics. Its maximum power dissipation is 85000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device utilizes mdmesh technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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