| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 175 | |
| 10 | |
| 100 | |
| 1 | |
| 160@10V | |
| 6.4@10V | |
| 6.4 | |
| 340@48V | |
| 35000 | |
| 3.7 | |
| 5.3 | |
| 14 | |
| 64 | |
| -55 | |
| 175 | |
| Industrial | |
| Tape and Reel | |
| 20 | |
| 1.1 | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.4(Max) |
| Largeur du paquet | 6.2(Max) |
| Longueur du paquet | 6.6(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The STD10P6F6 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 35000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with stripfet technology.
| EDA / CAD Models |
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