STMicroelectronicsSTB11NM80T4MOSFET
Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| 11 | |
| 400@10V | |
| 43.6@10V | |
| 43.6 | |
| 1630@25V | |
| 150000 | |
| 15 | |
| 17 | |
| 46 | |
| 22 | |
| -65 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.6(Max) mm |
| Largeur du paquet | 9.35(Max) mm |
| Longueur du paquet | 10.4(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the STB11NM80T4 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 150000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh technology. This MOSFET transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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