VishaySQJ858AEP-T1_GE3MOSFET
Trans MOSFET N-CH 40V 58A 5-Pin(4+Tab) PowerPAK SO EP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 2.5 | |
| -55 to 175 | |
| 58 | |
| 100 | |
| 1 | |
| 6.3@10V | |
| 36@10V | |
| 36 | |
| 1951@20V | |
| 48000 | |
| 8 | |
| 9 | |
| 26 | |
| 10 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07 |
| Largeur du paquet | 4.37 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 4 |
| Onglet | Tab |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | PowerPAK SO EP |
| 5 |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SQJ858AEP-T1-GE3 power MOSFET. Its maximum power dissipation is 48000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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