VishaySQ2351ES-T1_GE3MOSFET
Trans MOSFET P-CH 20V 3.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 1.5 | |
| 3.2 | |
| 100 | |
| 1 | |
| 115@4.5V | |
| 3.4@4.5V | |
| 265@10V | |
| 2000 | |
| 8 | |
| 18 | |
| 19 | |
| 20 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.02(Max) |
| Largeur du paquet | 1.4(Max) |
| Longueur du paquet | 3.04(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Amplify electronic signals and switch between them with the help of Vishay's SQ2351ES-T1_GE3 power MOSFET. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.